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SIRA00DP-T1-GE3
SIRA00DP-T1-GE3Reference image

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Mfr. #:
SIRA00DP-T1-GE3
Mfr.:
Batch:
new
Description:
Vishay, TrenchFET series, MOSFET, NMOS, PowerPAK SO-8 package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 100 A
Maximum drain-source voltage 30 V
Package type PowerPAK SO-8
Maximum drain-source resistance 1.35 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -16 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage 1.1 V
Maximum power dissipation 104 W
Transistor configuration Single
Category -
Other product information

Advantage price,SIRA00DP-T1-GE3 in stock can be shipped on the same day

In Stock: 3000
Qty.Unit PriceExt. Price
3000+ $0.9452 $2835.6
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
3000
Minimum:
3000
MPQ:
3000
Multiples:
1
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