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SI2304DDS-T1-GE3
SI2304DDS-T1-GE3Reference image

Images are for reference only

Mfr. #:
SI2304DDS-T1-GE3
Mfr.:
Batch:
new
Description:
Vishay, MOSFET, NMOS, SOT-23 package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 3.6 A
Maximum drain-source voltage 30 V
Package type SOT-23
Maximum drain-source resistance 75 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage 1.2 V
Maximum power dissipation 1.7 W
Transistor configuration Single
Category -
Other product information

Advantage price,SI2304DDS-T1-GE3 in stock can be shipped on the same day

In Stock: 50
Qty.Unit PriceExt. Price
50+ $0.2014 $10.07
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
50
Minimum:
50
MPQ:
50
Multiples:
1
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